FACTS ABOUT GERMANIUM REVEALED

Facts About Germanium Revealed

s is usually that in the substrate material. The lattice mismatch contributes to a large buildup of pressure energy in Ge layers epitaxially developed on Si. This pressure energy is generally relieved by two mechanisms: (i) technology of lattice dislocations for the interface (misfit dislocations) and (ii) elastic deformation of both equally the su

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